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  • Part No.BF621
    ManufacturerZETEX
    Size34 Kbytes
    Pages1 page
    DescriptionPNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
    Datasheet Summary with AI

    # BF621 High Voltage Transistor

    ## Features
    · High breakdown voltage
    · Low saturation voltage

    ## Applications
    · Video output stages in TV sets
    · Switching power supplies
    · Complementary type: BF620

    ## Absolute Maximum Ratings
    · Collector-Base Voltage (VCBO): -300 V
    · Collector-Emitter Voltage (VCEO): -300 V
    · Emitter-Base Voltage (VEBO): -5 V
    · Peak Pulse Current (ICM): -100 mA
    · Continuous Collector Current (IC): -50 mA
    · Power Dissipation (Ptot): -1 W (at Tamb = 25°C)
    · Operating and Storage Temperature Range (Tj:Tstg): -65°C to +150°C

    ## Electrical Characteristics (at Tamb = 25°C)
    · Collector-Base Breakdown Voltage (V(BR)CBO): -300 V (IC=-10µA, IE=0)
    · Collector-Emitter Breakdown Voltage (V(BR)CEO): -300 V (IC=-1mA, IB=0)
    · Emitter-Base Breakdown Voltage (V(BR)EBO): -5 V (IE=-100µA, IC=0)
    · Collector Cut-Off Current (ICBO): -10 to -20 nA (VCB=-200V, IE=0)
    · Colector Cut-Off Current (ICER): -50 to -10 nA (VCE=-200V, RBE=2.7K Ω)
    · Emitter Cut-Off Current (IEBO): -10 µ A (VEB=-5V, IC=0)
    · Collector-Emitter Saturation Voltage (VCE(sat)): -0.6 V (IC=-30mA, IB=-5mA)
    · Base-Emitter Saturation Voltage (VBE(sat)): -0.9 V (IC=-20mA, IB=-2mA)
    · Static Forward Current Transfer Ratio (hFE): 50 (IC=-25mA, VCE=-20V)
    · Transition Frequency (fT): 100 MHz (Typical) (IC=-10mA, VCE=-10V, f=100MHz)
    · Output Capacitance (Cobo): 0.8 pF (Typical) (VCB=-30V, f=1MHz)

    ## Notes
    · †: Tamb=150°C
    · *: Measured under pulsed conditions
    · For typical characteristics graphs, see FMMTA92 datasheet.
    · Package: SOT89

    # BF621 High Voltage Transistor

    ## Features
    · High breakdown voltage
    · Low saturation voltage

    ## Applications
    · Video output stages in TV sets
    · Switching power supplies
    · Complementary type: BF620

    ## Absolute Maximum Ratings
    · Collector-Base Voltage (VCBO): -300 V
    · Collector-Emitter Voltage (VCEO): -300 V
    · Emitter-Base Voltage (VEBO): -5 V
    · Peak Pulse Current (ICM): -100 mA
    · Continuous Collector Current (IC): -50 mA
    · Power Dissipation (Ptot): -1 W (at Tamb = 25°C)
    · Operating and Storage Temperature Range (Tj:Tstg): -65°C to +150°C

    ## Electrical Characteristics (at Tamb = 25°C)
    · Collector-Base Breakdown Voltage (V(BR)CBO): -300 V (IC=-10µA, IE=0)
    · Collector-Emitter Breakdown Voltage (V(BR)CEO): -300 V (IC=-1mA, IB=0)
    · Emitter-Base Breakdown Voltage (V(BR)EBO): -5 V (IE=-100µA, IC=0)
    · Collector Cut-Off Current (ICBO): -10 to -20 nA (VCB=-200V, IE=0)
    · Colector Cut-Off Current (ICER): -50 to -10 nA (VCE=-200V, RBE=2.7K Ω)
    · Emitter Cut-Off Current (IEBO): -10 µ A (VEB=-5V, IC=0)
    · Collector-Emitter Saturation Voltage (VCE(sat)): -0.6 V (IC=-30mA, IB=-5mA)
    · Base-Emitter Saturation Voltage (VBE(sat)): -0.9 V (IC=-20mA, IB=-2mA)
    · Static Forward Current Transfer Ratio (hFE): 50 (IC=-25mA, VCE=-20V)
    · Transition Frequency (fT): 100 MHz (Typical) (IC=-10mA, VCE=-10V, f=100MHz)
    · Output Capacitance (Cobo): 0.8 pF (Typical) (VCB=-30V, f=1MHz)

    ## Notes
    · †: Tamb=150°C
    · *: Measured under pulsed conditions
    · For typical characteristics graphs, see FMMTA92 datasheet.
    · Package: SOT89

    Part No.BF621
    ManufacturerZETEX
    Size34 Kbytes
    Pages1 page
    DescriptionPNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
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