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Hello, Please ask a question about BF621 Datasheet
# Example questions:
➢ How does the collector-emitter saturation voltage change with a collector current of -30ma?
➢ What is the typical transition frequency of this transistor under the specified test conditions?
➢ What is the maximum continuous collector current this transistor can handle?
# BF621 High Voltage Transistor
## Features
· High breakdown voltage
· Low saturation voltage
## Applications
· Video output stages in TV sets
· Switching power supplies
· Complementary type: BF620
## Absolute Maximum Ratings
· Collector-Base Voltage (VCBO): -300 V
· Collector-Emitter Voltage (VCEO): -300 V
· Emitter-Base Voltage (VEBO): -5 V
· Peak Pulse Current (ICM): -100 mA
· Continuous Collector Current (IC): -50 mA
· Power Dissipation (Ptot): -1 W (at Tamb = 25°C)
· Operating and Storage Temperature Range (Tj:Tstg): -65°C to +150°C
## Electrical Characteristics (at Tamb = 25°C)
· Collector-Base Breakdown Voltage (V(BR)CBO): -300 V (IC=-10µA, IE=0)
· Collector-Emitter Breakdown Voltage (V(BR)CEO): -300 V (IC=-1mA, IB=0)
· Emitter-Base Breakdown Voltage (V(BR)EBO): -5 V (IE=-100µA, IC=0)
· Collector Cut-Off Current (ICBO): -10 to -20 nA (VCB=-200V, IE=0)
· Colector Cut-Off Current (ICER): -50 to -10 nA (VCE=-200V, RBE=2.7K Ω)
· Emitter Cut-Off Current (IEBO): -10 µ A (VEB=-5V, IC=0)
· Collector-Emitter Saturation Voltage (VCE(sat)): -0.6 V (IC=-30mA, IB=-5mA)
· Base-Emitter Saturation Voltage (VBE(sat)): -0.9 V (IC=-20mA, IB=-2mA)
· Static Forward Current Transfer Ratio (hFE): 50 (IC=-25mA, VCE=-20V)
· Transition Frequency (fT): 100 MHz (Typical) (IC=-10mA, VCE=-10V, f=100MHz)
· Output Capacitance (Cobo): 0.8 pF (Typical) (VCB=-30V, f=1MHz)
## Notes
· †: Tamb=150°C
· *: Measured under pulsed conditions
· For typical characteristics graphs, see FMMTA92 datasheet.
· Package: SOT89
# BF621 High Voltage Transistor
## Features
· High breakdown voltage
· Low saturation voltage
## Applications
· Video output stages in TV sets
· Switching power supplies
· Complementary type: BF620
## Absolute Maximum Ratings
· Collector-Base Voltage (VCBO): -300 V
· Collector-Emitter Voltage (VCEO): -300 V
· Emitter-Base Voltage (VEBO): -5 V
· Peak Pulse Current (ICM): -100 mA
· Continuous Collector Current (IC): -50 mA
· Power Dissipation (Ptot): -1 W (at Tamb = 25°C)
· Operating and Storage Temperature Range (Tj:Tstg): -65°C to +150°C
## Electrical Characteristics (at Tamb = 25°C)
· Collector-Base Breakdown Voltage (V(BR)CBO): -300 V (IC=-10µA, IE=0)
· Collector-Emitter Breakdown Voltage (V(BR)CEO): -300 V (IC=-1mA, IB=0)
· Emitter-Base Breakdown Voltage (V(BR)EBO): -5 V (IE=-100µA, IC=0)
· Collector Cut-Off Current (ICBO): -10 to -20 nA (VCB=-200V, IE=0)
· Colector Cut-Off Current (ICER): -50 to -10 nA (VCE=-200V, RBE=2.7K Ω)
· Emitter Cut-Off Current (IEBO): -10 µ A (VEB=-5V, IC=0)
· Collector-Emitter Saturation Voltage (VCE(sat)): -0.6 V (IC=-30mA, IB=-5mA)
· Base-Emitter Saturation Voltage (VBE(sat)): -0.9 V (IC=-20mA, IB=-2mA)
· Static Forward Current Transfer Ratio (hFE): 50 (IC=-25mA, VCE=-20V)
· Transition Frequency (fT): 100 MHz (Typical) (IC=-10mA, VCE=-10V, f=100MHz)
· Output Capacitance (Cobo): 0.8 pF (Typical) (VCB=-30V, f=1MHz)
## Notes
· †: Tamb=150°C
· *: Measured under pulsed conditions
· For typical characteristics graphs, see FMMTA92 datasheet.
· Package: SOT89
| Part No. | BF621 |
| Manufacturer | ZETEX |
| Size | 34 Kbytes |
| Pages | 1 page |
| Description | PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR |
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