BF621 datasheet(1/1 Pages) ZETEX

부품명	BF621

상세설명	PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

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제조업체	ZETEX [Zetex Semiconductors]

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SOT89 PNP SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 3 – MARCH 2001

✪

FEATURES

*

High breakdown and low saturation voltage

APPLICATIONS

*

Suitable for video output stages in TV sets

*

Switching power supplies

COMPLEMENTARY TYPE –

BF620

PARTMARKING DETAIL –

DF

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

-300

V

Collector-Emitter Voltage

VCEO

-300

V

Emitter-Base Voltage

VEBO

-5

V

Peak Pulse Current

ICM

-100

mA

Continuous Collector Current

IC

-50

mA

Power Dissipation at Tamb=25°C

Ptot

-1

W

Operating and Storage Temperature Range

Tj:Tstg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

MAX.

UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO

-300

V

IC=-10µA, IE=0

Collector-Emitter

Breakdown Voltage

V(BR)CEO

-300

V

IC=-1mA, IB=0*

Emitter-Base Breakdown

Voltage

V(BR)EBO

-5

V

IE=-100µA, IC=0

Collector Cut-Off Current

ICBO

-10

-20

nA

µA

VCB=-200V, IE=0

VCB=-200V, IE=0 †

Colector Cut-Off Current

ICER

-50

-10

nA

µA

VCE=-200V, RBE=2.7KΩ

VCE=-200V, RBE=2.7KΩ †

Emitter Cut-Off Current

IEBO

-10

µA

VEB=-5V, IC=0

Collector-Emitter Saturation

Voltage

VCE(sat)

-0.6

V

IC=-30mA, IB=-5mA*

Base-Emitter Saturation Voltage

VBE(sat)

-0.9

V

IC=-20mA, IB=-2mA*

Static Forward

Current Transfer Ratio

hFE

50

IC=-25mA, VCE=-20V*

Transition Frequency

fT

100 Typical

MHz

IC=-10mA, VCE=-10V

f=100MHz

Output Capacitance

Cobo

0.8 Typical

pF

VCB=-30V, f=1MHz

†Tamb=150°C

*Measured under pulsed conditions.

For typical characteristics graphs see FMMTA92 datasheet.

BF621

C

B

E

SOT89

TBA

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