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M28S-C Datasheet with Chat AI
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  • Part No.M28S-C
    ManufacturerMCC
    Size219 Kbytes
    Pages2 pages
    DescriptionNPN Silicon Plastic-Encapsulate Transistor
    Datasheet Summary with AI

    # M28S NPN Silicon Transistor

    ## Features

    · Power Dissipation: 0.625 Watts
    · Collector Current: 1.0A
    · Collector-Base Voltage: 40V
    · Junction Temperature Range: -55°C to +150°C
    · UL 94 V-0 Flammability Rating
    · Moisture Sensitivity Level 1
    · Lead Free / RoHS Compliant ("P" suffix)
    · Marking: M28S X

    ## Electrical Characteristics (Typical @ 25°C)

    OFF Characteristics

    · Collector-Emitter Breakdown Voltage (V(BR)CEO): 20 Vdc
    · Collector-Base Breakdown Voltage (V(BR)CBO): 40 Vdc
    · Emitter-Base Breakdown Voltage (V(BR)EBO): 6.0 Vdc
    · Collector Cutoff Current (ICBO): ≤ 1.0 uAdc
    · Collector Cutoff Current (ICEO): ≤ 5.0 Vdc
    · Emitter Cutoff Current (IEBO): ≤ 0.1 uAdc

    ON Characteristics

    · DC Current Gain (hFE -1): 290 - 1000
    · DC Current Gain (hFE -2): 300 - 1000
    · DC Current Gain (hFE -3): 300 - 1000
    · DC Current Gain (hFE -4): 300 - 1000
    · Collector-Emitter Saturation Voltage (VCE(sat)): ≤ 0.55 Vdc
    · Transition Frequency (fT): ≥ 100 MHz

    ## Classification of hFE

    Rank Range
    B 300-550
    C 500-700
    D 650-1000

    ## Dimensions (inches/mm)

    Dimension Min Max
    | A | 0.170 | 0.190 | (4.33/4.83 mm)
    | B | 0.170 | 0.190 | (4.30/4.83 mm)
    | C | 0.550 | 0.590 | (13.97/14.97 mm)
    | D | 0.010 | 0.020 | (0.36/0.56 mm)
    | E | 0.130 | 0.160 | (3.30/3.96 mm)
    | G | 0.096 | 0.104 | (2.44/2.64 mm)

    ## Ordering Information

    · Part Number-AP: Ammo Packing (2Kpcs/Ammo Box)
    · Part Number-BP: Bulk Packing (100Kpcs/Carton)

    # M28S NPN Silicon Transistor

    ## Features

    · Power Dissipation: 0.625 Watts
    · Collector Current: 1.0A
    · Collector-Base Voltage: 40V
    · Junction Temperature Range: -55°C to +150°C
    · UL 94 V-0 Flammability Rating
    · Moisture Sensitivity Level 1
    · Lead Free / RoHS Compliant ("P" suffix)
    · Marking: M28S X

    ## Electrical Characteristics (Typical @ 25°C)

    OFF Characteristics

    · Collector-Emitter Breakdown Voltage (V(BR)CEO): 20 Vdc
    · Collector-Base Breakdown Voltage (V(BR)CBO): 40 Vdc
    · Emitter-Base Breakdown Voltage (V(BR)EBO): 6.0 Vdc
    · Collector Cutoff Current (ICBO): ≤ 1.0 uAdc
    · Collector Cutoff Current (ICEO): ≤ 5.0 Vdc
    · Emitter Cutoff Current (IEBO): ≤ 0.1 uAdc

    ON Characteristics

    · DC Current Gain (hFE -1): 290 - 1000
    · DC Current Gain (hFE -2): 300 - 1000
    · DC Current Gain (hFE -3): 300 - 1000
    · DC Current Gain (hFE -4): 300 - 1000
    · Collector-Emitter Saturation Voltage (VCE(sat)): ≤ 0.55 Vdc
    · Transition Frequency (fT): ≥ 100 MHz

    ## Classification of hFE

    Rank Range
    B 300-550
    C 500-700
    D 650-1000

    ## Dimensions (inches/mm)

    Dimension Min Max
    | A | 0.170 | 0.190 | (4.33/4.83 mm)
    | B | 0.170 | 0.190 | (4.30/4.83 mm)
    | C | 0.550 | 0.590 | (13.97/14.97 mm)
    | D | 0.010 | 0.020 | (0.36/0.56 mm)
    | E | 0.130 | 0.160 | (3.30/3.96 mm)
    | G | 0.096 | 0.104 | (2.44/2.64 mm)

    ## Ordering Information

    · Part Number-AP: Ammo Packing (2Kpcs/Ammo Box)
    · Part Number-BP: Bulk Packing (100Kpcs/Carton)

    Part No.M28S-C
    ManufacturerMCC
    Size219 Kbytes
    Pages2 pages
    DescriptionNPN Silicon Plastic-Encapsulate Transistor
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