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M28S-C 데이터시트(PDF) 1 Page - Micro Commercial Components |
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M28S-C 데이터시트(HTML) 1 Page - Micro Commercial Components |
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1 / 2 page ![]() NPN Silicon Plastic-Encapsulate Transistor Features • Capable of 0.625Watts of Power Dissipation. • Collector-current 1.0A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55 OC to +150OC Electrical Characteristics @ 25 OC Unless Otherwise Specified Symbol Parameter Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage (I C=1.0mAdc, IB=0) 20 --- Vdc V(BR)CBO Collector-Base Breakdown Voltage (I C=0.1mAdc, IE=0) 40 --- Vdc V(BR)EBO Emitter-Base Breakdown Voltage (I E=0.1mAdc, IC=0) 6.0 --- Adc ICBO Collector Cutoff Current (V CB=40Vdc, IE=0) --- 1.0 uAdc ICEO Collector Cutoff Current (VCE=20Vdc, IE=0) ---- 5.0 Vdc IEBO Emitter Cutoff Current (VEB=5.0Vdc, IC=0) --- 0.1 uAdc ON CHARACTERISTICS hFE-1 DC Current Gain (I C=1.0mAdc, VCE=1.0Vdc) 290 1000 --- hFE-2 DC Current Gain (I C=100mAdc, VCE=1.0Vdc) 300 1000 --- h FE-3 DC Current Gain (I C=300mAdc, VCE=1.0Vdc) 300 1000 --- h FE-4 DC Current Gain (I C=500mAdc, VCE=1.0Vdc) 300 1000 --- V CE(sat) Collector-Emitter Saturation Voltage (I C=600mAdc, IB=20mAdc) --- 0.55 Vdc fT Transition Frequency (VCE=10Vdc, IC=50mAdc, f=30MHz) 100 --- MHz CLASSIFICATION OF HFE Rank B C D Range 300-550 500-700 650-1000 TO-92 AE B C D G Revision: A 20 11/01/01 omponents 20736 Marilla Street Chatsworth !"# $% !"# MCC DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A .170 .190 4.33 4.83 B .170 .190 4.30 4.83 C .550 .590 13.97 14.97 D .010 .020 0.36 0.56 E .130 .160 3.30 3.96 G .0 96 .104 2.44 2.64 TM Micro Commercial Components www.mccsemi.com 1 of 2 • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • Marking: M28S X M28S-B M28S-C M28S-D • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 E C B |
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