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Hello, Please ask a question about 2N5152_04 Datasheet
# Example questions:
➢ What is the typical value for dc current gain (hfe) when ic = 50ma and vce = 5v?
➢ What is the typical value for vce(sat) when the collector current (ic) is 5a and the base current (ib) is 250ma?
➢ What is the maximum thermal resistance from junction to case (rthj-case) for this transistor?
Device: Likely a NPN Power Transistor (based on parameters)
Manufacturer: Semelab Plc
Document Number: 3072
Issue: 3
I. DC Characteristics
️· Collector Cut-off Current (ICES):
- VCE = 60V, VBE = 0: 1 µA
- VCE = 100V, VBE = 0: 1 mA
️· Collector Cut-off Current (ICEV):
- VCE = 60V, Tcase = 150°C, VBE = -2V: 500 µA
️· Collector Cut-off Current (ICEO):
- VCE = 40V, IB = 0: 50 µA (Typical 50)
️· Emitter Cut-off Current (IEBO):
- VEB = 5V, IC = 0: 1 µA
- VEB = 6V, IC = 0: 1 mA
️· Collector-Emitter Saturation Voltage (VCE(sat)):
- IC = 2.5A, IB = 250mA: 0.75V (Typical 0.75V)
- IC = 5A, IB = 500mA: 1.5V (Typical 1.5V)
️· Base-Emitter Saturation Voltage (VBE(sat)):
- IC = 2.5A, IB = 250mA: 1.45V (Typical 1.45V)
- IC = 5A, IB = 500mA: 2.2V (Typical 2.2V)
️· Base-Emitter Voltage (VBE):
- IC = 2.5A, VCE = 5V: 1.45V (Typical 1.45V)
II. AC Characteristics
️· Small-Signal DC Current Gain (hFE):
- IC = 0.1A, VCE = 5V, f = 1kHz: 50 (Typical 50)
- IC = 0.5A, VCE = 5V, f = 20MHz: 3.5 (Typical 3.5)
️· DC Current Gain (hFE):
- IC = 2.5A, VCE = 5V, Tc = -55°C: 70 (Typical 70) to 200
- IC = 5A, VCE = 5V: 40 (Typical 40)
III. Switching Characteristics
️· Turn-On Time (ton):
- IC = 5A, VCC = 30V, IB1 = 0.5A: 0.5 µs
️· Turn-Off Time (toff):
- IC = 5A, VCC = 30V, IB1 = -IB2 = 0.5A: 1.3 µs
IV. Capacitance
️· Collector-Base Capacitance (CCBO):
- IE = 0, VCB = 10V, f = 1MHz: 250 pF
V. Thermal Characteristics
️· Thermal Resistance, Junction to Case (Rthjc): 15 °C/W
️· Thermal Resistance, Junction to Ambient (Rthja): 175 °C/W
Important Notes:
️· "Typical" values are provided. Actual values will vary.
️· The datasheet includes a note that pulse test conditions apply (tp = 300 µs, δ < 2%).
Device: Likely a NPN Power Transistor (based on parameters)
Manufacturer: Semelab Plc
Document Number: 3072
Issue: 3
I. DC Characteristics
️· Collector Cut-off Current (ICES):
- VCE = 60V, VBE = 0: 1 µA
- VCE = 100V, VBE = 0: 1 mA
️· Collector Cut-off Current (ICEV):
- VCE = 60V, Tcase = 150°C, VBE = -2V: 500 µA
️· Collector Cut-off Current (ICEO):
- VCE = 40V, IB = 0: 50 µA (Typical 50)
️· Emitter Cut-off Current (IEBO):
- VEB = 5V, IC = 0: 1 µA
- VEB = 6V, IC = 0: 1 mA
️· Collector-Emitter Saturation Voltage (VCE(sat)):
- IC = 2.5A, IB = 250mA: 0.75V (Typical 0.75V)
- IC = 5A, IB = 500mA: 1.5V (Typical 1.5V)
️· Base-Emitter Saturation Voltage (VBE(sat)):
- IC = 2.5A, IB = 250mA: 1.45V (Typical 1.45V)
- IC = 5A, IB = 500mA: 2.2V (Typical 2.2V)
️· Base-Emitter Voltage (VBE):
- IC = 2.5A, VCE = 5V: 1.45V (Typical 1.45V)
II. AC Characteristics
️· Small-Signal DC Current Gain (hFE):
- IC = 0.1A, VCE = 5V, f = 1kHz: 50 (Typical 50)
- IC = 0.5A, VCE = 5V, f = 20MHz: 3.5 (Typical 3.5)
️· DC Current Gain (hFE):
- IC = 2.5A, VCE = 5V, Tc = -55°C: 70 (Typical 70) to 200
- IC = 5A, VCE = 5V: 40 (Typical 40)
III. Switching Characteristics
️· Turn-On Time (ton):
- IC = 5A, VCC = 30V, IB1 = 0.5A: 0.5 µs
️· Turn-Off Time (toff):
- IC = 5A, VCC = 30V, IB1 = -IB2 = 0.5A: 1.3 µs
IV. Capacitance
️· Collector-Base Capacitance (CCBO):
- IE = 0, VCB = 10V, f = 1MHz: 250 pF
V. Thermal Characteristics
️· Thermal Resistance, Junction to Case (Rthjc): 15 °C/W
️· Thermal Resistance, Junction to Ambient (Rthja): 175 °C/W
Important Notes:
️· "Typical" values are provided. Actual values will vary.
️· The datasheet includes a note that pulse test conditions apply (tp = 300 µs, δ < 2%).
| Part No. | 2N5152_04 |
| Manufacturer | SEME-LAB |
| Size | 27 Kbytes |
| Pages | 3 pages |
| Description | HIGH SPEED MEDIUM VOLTAGE SWITCHES |
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