AUTO RESTART WHILE AC IS Datasheet(PDF) - ST2318SRG

제조업체	부품명	데이터시트	상세설명
Stanson Technology	ST2318SRG	221Kb/7P	ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
	ST2319SRG	229Kb/8P	ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
	ST3407SRG	184Kb/6P	ST3407SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4416	966Kb/6P	STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN6303	705Kb/6P	STN6303 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN6335	843Kb/6P	STN6335 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STP4407	545Kb/6P	The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
	STN1810	966Kb/7P	STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4392	383Kb/7P	STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4438	269Kb/6P	STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4480	742Kb/6P	STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4546	363Kb/6P	STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4850	532Kb/6P	STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STP4435A	311Kb/6P	STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	ST2315SRG	218Kb/6P	ST2315SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	ST3401SRG	212Kb/6P	ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.
	ST3406SRG	325Kb/6P	ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STP7401	461Kb/6P	STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STP9437	375Kb/6P	STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STP9527	927Kb/7P	STP9527 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

AUTO RESTART WHILE AC IS 데이터시트, PDF

링크 URL :