| 제조업체 | 부품명 | 데이터시트 | 상세설명 |
Stanson Technology |
ST2319SRG
|
229Kb / 8P |
ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
|
ST3400SRG
|
547Kb / 6P |
The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
|
ST3406SRG
|
325Kb / 6P |
ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
|
ST3422A
|
338Kb / 6P |
The ST3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
|
STN1810
|
966Kb / 7P |
STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
|
STN4346
|
352Kb / 7P |
STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
|
STN4392
|
383Kb / 7P |
STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
|
STN4416
|
966Kb / 6P |
STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
|
STN4426
|
362Kb / 6P |
STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
|
STN4438
|
269Kb / 6P |
STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Korean ▼ 
English
Chinese
German
Japanese
Russian
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
