DESCRIPTION
The NE678M04 is fabricated using NECs HFT3 wafer process. With a transition frequency of 12 GHz, the NE678M04 is usable in applications from 100 MHz to 3 GHz. The NE678M04 provides P1dB of 18 dBm, even with low voltage and low current, making this device an excellent choice for the driver stage for mobile or fixed wireless applications.
The NE678M04 is housed in NECs new low profile/flat lead style "M04" package

FEATURES
• HIGH GAIN BANDWIDTH:
   fT = 12 GHz
• HIGH OUTPUT POWER:
   P-1dB = 18 dBm at 1.8 GHz
• HIGH LINEAR GAIN:
   GL = 13 dB at 1.8 GHz
• NEW LOW PROFILE M04 PACKAGE:
   SOT-343 footprint, with a height of only 0.59 mm
   Flat lead style for better RF performance