FGM633 데이터시트(PDF)

상세설명	VCE = 600 V, IC = 18 A Trench IGBT

유사한 부품 번호 - FGM633

제조업체	부품명	데이터시트	상세설명
Sanken electric	FGM603	175Kb / 4P	Selection Guide
	FGM622S	495Kb / 7P	Low Saturation Voltage
	FGM622S	495Kb / 7P	Low Saturation Voltage
	FGM622S	175Kb / 4P	Selection Guide
	FGM623S	387Kb / 7P	Low Saturation Voltage VCE(sat)=1.5V typ. (IC=30A)

제조업체	부품명	데이터시트	상세설명
International Rectifier	IRGPS4067DPBF	270Kb / 10P	Low VCE (on) Trench IGBT Technology
Fairchild Semiconductor	FGA3060ADF	1Mb / 9P	600 V, 30 A Field Stop Trench IGBT
STMicroelectronics	STGW20H60DF	1Mb / 17P	600 V, 20 A high speed trench gate field-stop IGBT 06-Jun-2013
Sanken electric	FGA65A3H	394Kb / 12P	VCE = 650 V, IC = 15 A Trench Field Stop IGBT
Sanken electric	MGD622	362Kb / 13P	VCE = 600 V, IC = 20 A Trench IGBT with Fast Recovery Diode
International Rectifier	IRG7PH42UD2PBF	349Kb / 10P	Low VCE (ON) Trench IGBT Technology
International Rectifier	IRGI4056DPBF	421Kb / 10P	Low VCE (ON) trench IGBT technology
Vishay Siliconix	VS-GT80DA60U	176Kb / 9P	Insulated Gate Bipolar Transistor (Trench IGBT), 600 V, 80 A 10-Sep-2019
Vishay Siliconix	VS-GT80DA60U	175Kb / 9P	Insulated Gate Bipolar Transistor (Trench IGBT), 600 V, 80 A 10-Sep-2019