| 제조업체 | 부품명 | 데이터시트 | 상세설명 |
Infineon Technologies A... |
PTFB241402F
|
556Kb / 13P |
High Power RF LDMOS Field Effect Transistor 140 W, 2300 ??2400 MHz
Rev. 03, 2010-04-19 |
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PXAC243502FV
|
1Mb / 10P |
High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz
Rev. 03.2, 2016-06-22 |
|
PXAC201602FC
|
402Kb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 ??1920 MHz, 2010 ??2025 MHz
Rev. 04.1, 2016-07-19 |
|
PTFC270101M
|
410Kb / 22P |
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz
Rev. 04.1, 2016-07-26 |
|
PTFB241402F
|
810Kb / 13P |
High Power RF LDMOS Field Effect Transistor 140 W, 2300 ??2400 MHz
Rev. 04.1, 2016-06-15 |
|
PTFA220121M
|
381Kb / 21P |
High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz
Rev. 10, 2015-10-23 |
Cree, Inc |
PTFC270051M
|
745Kb / 14P |
High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 ??2700 MHz
|
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PTFC270101M
|
970Kb / 22P |
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz
|
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PTFA220121M
|
955Kb / 21P |
High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz
|
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PXAC201602FC
|
529Kb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 - 1920 MHz, 2010 - 2025 MHz
|
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