[TRANSCOM]

DESCRIPTION
The TC2571 is packaged the TC1501 Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power chip. The cu-based ceramic package that requires a surface-mount package is a low-cost and high performance package. All devices are 100% DC tested to assure consistent quality. Typical applications include high dynamic range power amplifier for commercial applications including Cellular/PCS systems, and military high performance power amplifier.

FEATURES
• 1W Typical Output Power at 6 GHz
• 11dB Typical Power Gain at 6 GHz
• High Linearity:
   IP3 = 40 dBm Typical at 6 GHz
• High Power Added Efficiency:
   PAE ≥ 43 % for Class A Operation
• Suitable for High Reliability Application
• Breakdown Voltage:
   BVDGO ≥ 15 V
• Lg = 0.35 µm, Wg = 2.4 mm
• 100 % DC Tested
• Low Cost Ceramic Package