Features
1) Very low VCE(sat).
   VCE(sat) 0.4 V (Typ.)
   (IC / IB = 500mA / 50mA)
2) High current capacity in compact package.
3) Complements the FTB1197K
4) We declare that the material of product compliance with RoHS requirements.

Structure
   Epitaxial planar type
   NPN silicon transistor