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IR21531S 데이터시트 (PDF) - Infineon Technologies AG

IR21531S Datasheet PDF - Infineon Technologies AG
부품명 IR21531S
다운로드  IR21531S 다운로드
파일 크기   223.44 Kbytes
페이지   9 Pages
제조업체  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG
상세설명 SELF-OSCILLATING HALF-BRIDGE DRIVER

IR21531S Datasheet (PDF)

Go To PDF Page 다운로드 데이터시트
IR21531S Datasheet PDF - Infineon Technologies AG

부품명 IR21531S
다운로드  IR21531S Click to download

파일 크기   223.44 Kbytes
페이지   9 Pages
제조업체  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG
상세설명 SELF-OSCILLATING HALF-BRIDGE DRIVER

IR21531S 데이터시트 (HTML) - Infineon Technologies AG


IR21531S 제품 세부 정보

Description
The IR21531D(S) are an improved version of the popular IR2155 and IR2151 gate driver ICs, and incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. The IR21531 provides more functionality and is easier to use than previous ICs. A shutdown feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage control signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage lockout threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at startup. Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins.

Features
• Integrated 600V half-bridge gate driver
• 15.6V zener clamp on Vcc
• True micropower start up
• Tighter initial deadtime control
• Low temperature coefficient deadtime
• Shutdown feature (1/6th Vcc) on CT pin
• Increased undervoltage lockout Hysteresis (1V)
• Lower power level-shifting circuit
• Constant LO, HO pulse widths at startup
• Lower di/dt gate driver for better noise immunity
• Low side output in phase with RT
• Internal 50nsec (typ.) bootstrap diode (IR21531D)
• Excellent latch immunity on all inputs and outputs
• ESD protection on all leads
• Also available LEAD-FREE




유사한 부품 번호 - IR21531S

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유사한 설명 - IR21531S

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Infineon Technologies AG 에 대하여


Infineon Technologies는 자동차, 산업 및 통신 시스템과 같은 다양한 산업에 전력 관리, 보안 및 제어 솔루션을 제공하는 것을 전문으로하는 글로벌 반도체 제조업체입니다.
이 회사는 1999 년에 설립되었으며 독일 Neubiberg에 본사를두고 있습니다.
Infineon은 마이크로 컨트롤러, 전력 반도체, 센서 및 기타 통합 회로를 포함한 다양한 제품을 제공합니다.
이 회사는 전 세계 여러 나라의 운영 및 시설을 갖춘 세계 시장에서 강력한 입지를 가지고 있습니다.

*이 정보는 일반적인 정보 제공의 목적으로만 제공되며 위 정보로 인해 발생하는 손실이나 손해에 대해 책임을 지지 않습니다.




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