GENERAL DESCRIPTION
The K5L5628JT(B)M is a Multi Chip Package Memory which combines 256Mbit Synchronous Burst Multi Bank NOR Flash Memory and 128Mbit Synchronous Burst UtRAM.
256Mbit Synchronous Burst Multi Bank NOR Flash Memory is organized as 16M x16 bits and 128Mbit Synchronous Burst UtRAM is organized as 8M x16 bits.

FEATURES
<Common>
• Operating Temperature : -30°C ~ 85°C
• Package : 115Ball FBGA Type - 8.0mm x 12.0mm
   0.8mm ball pitch
   1.4mm (Max.) Thickness

<NOR Flash>
• Single Voltage, 1.7V to 1.95V for Read and Write operations
• Organization
   - 16,772,216 x 16 bit ( Word Mode Only)
• Read While Program/Erase Operation
• Multiple Bank Architecture
   - 16 Banks (16Mb Partition)
• OTP Block : Extra 256Byte block
• Read Access Time (@ CL=30pF)
   - Asynchronous Random Access Time : 90ns (54MHz) / 80ns (66MHz)
   - Synchronous Random Access Time : 88.5ns (54MHz) / 70ns (66MHz)
   - Burst Access Time : 14.5ns (54MHz) / 11ns (66MHz)
• Burst Length :
   - Continuous Linear Burst
   - Linear Burst : 8-word & 16-word with No-wrap & Wrap
• Block Architecture
   - Eight 4Kword blocks and five hundreds eleven 32Kword blocks
   - Bank 0 contains eight 4 Kword blocks and thirty-one 32Kword blocks
   - Bank 1 ~ Bank 15 contain four hundred eighty 32Kword blocks
• Reduce program time using the VPP
• Support Single & Quad word accelerate program
• Power Consumption (Typical value, CL=30pF)
   - Burst Access Current : 30mA
   - Program/Erase Current : 15mA
   - Read While Program/Erase Current : 40mA
   - Standby Mode/Auto Sleep Mode : 25uA
• Block Protection/Unprotection
   - Using the software command sequence
   - Last two boot blocks are protected by WP=VIL
   - All blocks are protected by VPP=VIL
• Handshaking Feature
   - Provides host system with minimum latency by monitoring RDY
• Erase Suspend/Resume
• Program Suspend/Resume
• Unlock Bypass Program/Erase
• Hardware Reset (RESET)
• Data Polling and Toggle Bits
   - Provides a software method of detecting the status of program or erase completion
• Endurance
   100K Program/Erase Cycles Minimum
• Data Retention : 10 years
• Support Common Flash Memory Interface
• Low Vcc Write Inhibit

<UtRAM>
• Process Technology: CMOS
• Organization: 8M x16 bit
• Power Supply Voltage: VCC 2.5~2.7V, VCCQ 1.7~2.0V
• Three State Outputs
• Supports MRS (Mode Register Set)
• MRS control - MRS Pin Control
• Supports Power Saving modes - Partial Array Refresh mode Internal TCSR
• Supports Driver Strength Optimization for system environment power saving.
• Supports Asynchronous 4-Page Read and Asynchronous Write Operation
• Supports Synchronous Burst Read and Synchronous Burst Write Operation
• Synchronous Burst(Read/Write) Operation
   - Supports 4 word / 8 word / 16 word and Full Page(256 word) burst
   - Supports Linear Burst type & Interleave Burst type
   - Latency support : Latency 3 @ 52.9MHz(tCD 12ns)
   - Supports Burst Read Suspend in No Clock toggling
   - Supports Burst Write Data Masking by /UB & /LB pin control
   - Supports WAIT pin function for indicating data availability.
• Max. Burst Clock Frequency : 52.9MHz