B5817W 데이터시트(PDF) - Shanghai Leiditech Electronic Technology Co., Ltd

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B5817W 데이터시트 (PDF) - Shanghai Leiditech Electronic Technology Co., Ltd

B5817W Datasheet PDF - Shanghai Leiditech Electronic Technology Co., Ltd


부품명	B5817W

다운로드	B5817W 다운로드

파일 크기	790.7 Kbytes

페이지	3 Pages

제조업체	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

홈페이지	http://www.leiditech.com

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상세설명	Low stored change,majority carrier conduction.

B5817W Datasheet (PDF)

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다운로드 데이터시트

B5817W Datasheet PDF - Shanghai Leiditech Electronic Technology Co., Ltd


부품명	B5817W

다운로드	B5817W Click to download

파일 크기	790.7 Kbytes

페이지	3 Pages

제조업체	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

홈페이지	http://www.leiditech.com

Logo

상세설명	Low stored change,majority carrier conduction.

B5817W 데이터시트 (HTML) - Shanghai Leiditech Electronic Technology Co., Ltd

B5817W Datasheet HTML 1Page - Shanghai Leiditech Electronic Technology Co., Ltd

B5817W Datasheet HTML 2Page - Shanghai Leiditech Electronic Technology Co., Ltd

B5817W Datasheet HTML 3Page - Shanghai Leiditech Electronic Technology Co., Ltd

B5817W 제품 세부 정보

FEATURES：
◆ Extremely low VF.
◆ Low stored change,majority carrier conduction.
◆ Low power loss/high efficient
◆ For Use In Low Voltage, High Frequency Inverters.
◆ Free Wheeling, And Polarity Protection Applications.

유사한 부품 번호 - B5817W

제조업체	부품명	데이터시트	상세설명
Jiangsu Changjiang Elec...	B5817W	336Kb / 3P	SCHOTTKY BARRIER DIODE
Weitron Technology	B5817W	161Kb / 3P	Surface Mount Schottky Barrier Diodes
TRANSYS Electronics Lim...	B5817W	63Kb / 1P	SCHOTTKY BARRIER DIODE
Galaxy Semi-Conductor H...	B5817W	275Kb / 4P	Schottky Barrier Diode
Silicon Standard Corp.	B5817W	254Kb / 4P	SCHOTTKY BARRIER DIODE

유사한 설명 - B5817W

제조업체	부품명	데이터시트	상세설명
Gaomi Xinghe Electronic...	B5817W	300Kb / 3P	Low stored change,majority carrier conduction.
Taiwan Semiconductor Co...	MBR20200PT	103Kb / 2P	Metal silicon junction, majority carrier conduction
Gaomi Xinghe Electronic...	MBR1030	377Kb / 2P	Metal of silicon rectifier , majority carrier conduction
Kersemi Electronic Co.,...	MBR10H60	1Mb / 3P	Metal silicon junction, majority carrier conduction
Sangdest Microelectroni...	1N5817W	135Kb / 4P	Metal silicon junction, majority carrier conduction
SHIKUES Electronics	B5817WS	2Mb / 4P	Extremely low, Low stored change, Majority carrier conduction
	BAL99	657Kb / 2P	Extremely low, Low stored change, Majority carrier conduction
	MBR30100C-ST	482Kb / 3P	Trench MOS schottky technology, Low stored charge Majority Carrier Conduction
Shanghai Leiditech Elec...	RB160M-30	587Kb / 3P	Low stored change,majority carrier conduction.
Shenzhen Luguang Electr...	SS345FL	1Mb / 2P	Metal silicon junction, majority carrier conduction

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