General Description
This device includes two specialized N-Channel MOSFETs in
a dual package. The switch node has been internally connected to
enable easy placement and routing of synchronous buck converters.
The control MOSFET (Q1) and synchronous SyncFET (Q2) have
been designed to provide optimal power efficiency.

Features
Q1: N-Channel
• Max RDS(on) = 5.0 m at VGS = 10 V, ID = 17 A
• Max RDS(on) = 6.5 m at VGS = 4.5 V, ID = 14 A
Q2: N-Channel
• Max RDS(on) = 2.4 m at VGS = 10 V, ID = 25 A
• Max RDS(on) = 3.0 m at VGS = 4.5 V, ID = 22 A
• Low Inductance Packaging Shortens Rise/Fall Times, Resulting in
Lower Switching Losses.
• MOSFET Integration Enables Optimum Layout for Lower Circuit
Inductance and Reduced Switch Node Ringing.
• RoHS Compliant

Applications
• Computing
• Communications
• General Purpose Point of Load