FEATURES
• Advanced process technology
• Surface-mount (IRF9Z14S, SiHF9Z14S)
• Low-profile through-hole (IRF9Z14L, SiHF9Z14L)
• 175 °C operating temperature
• Fast switching
• P-channel
• Fully avalanche rated
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details

DESCRIPTION
Third generation power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D2PAK is a surface-mount power package capable of
accommodating die size up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface-mount package. The
D2PAK is suitable for high current applications because of is
low internal connection resistance and can dissipate up to
2.0 W in a typical surface mount application.
The through-hole version (IRF9Z14L, SiHF9Z14L) is
available for low-profile applications.