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STGAP2SICS 데이터시트 (PDF) - STMicroelectronics

STGAP2SICS Datasheet PDF - STMicroelectronics
부품명 STGAP2SICS
다운로드  STGAP2SICS 다운로드
파일 크기   716.81 Kbytes
페이지   22 Pages
제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
상세설명 Galvanically isolated 4 A single gate driver for SiC MOSFETs

STGAP2SICS Datasheet (PDF)

Go To PDF Page 다운로드 데이터시트
STGAP2SICS Datasheet PDF - STMicroelectronics

부품명 STGAP2SICS
다운로드  STGAP2SICS Click to download

파일 크기   716.81 Kbytes
페이지   22 Pages
제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
상세설명 Galvanically isolated 4 A single gate driver for SiC MOSFETs

STGAP2SICS 데이터시트 (HTML) - STMicroelectronics


STGAP2SICS 제품 세부 정보

Features
• High voltage rail up to 1200 V
• Driver current capability: 4 A sink/source @25°C
• dV/dt transient immunity ±100 V/ns in full temperature range
• Overall input-output propagation delay: 75 ns
• Separate sink and source option for easy gate driving configuration
• 4 A Miller CLAMP dedicated pin option
• UVLO function
• Gate driving voltage up to 26 V
• 3.3 V, 5 V TTL/CMOS inputs with hysteresis
• Temperature shut-down protection
• Standby function
• 6 kV galvanic isolation
• Wide body SO-8W package
• UL 1577 recognized

Description
The STGAP2SICS is a single gate driver which provides galvanic isolation between
the gate driving channel and the low voltage control and interface circuitry.
The gate driver is characterized by 4 A capability and rail-to-rail outputs, making the
device also suitable for mid and high power applications such as power conversion
and motor driver inverters in industrial applications. The device is available in
two different configurations. The configuration with separated output pins allows
to independently optimize turn-on and turn-off by using dedicated gate resistors.
The configuration featuring single output pin and Miller CLAMP function prevents
gate spikes during fast commutations in half-bridge topologies. Both configurations
provide high flexibility and bill of material reduction for external components.
The device integrates protection functions: UVLO with optimized value for SiC
MOSFETs and thermal shut down are included to facilitate the design of highly
reliable systems. Dual input pins allow the selection of signal polarity control and
implementation of HW interlocking protection to avoid cross-conduction in case of
controller malfunction. The input to output propagation delay is less than 75 ns, which
delivers high PWM control accuracy. A standby mode is available to reduce idle
power consumption.




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*이 정보는 일반적인 정보 제공의 목적으로만 제공되며 위 정보로 인해 발생하는 손실이나 손해에 대해 책임을 지지 않습니다.




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