General Description
Mimix Broadband’s distributed 2.0-22.0 GHz GaAs MMIC power amplifier has a small signal gain of 11.0 dB with a +24.0 dBm P1dB output compression point. This MMIC uses Mimix Broadband’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Test Instrumentation, Military, Space, Microwave Point-to-Point Radio, SATCOM and VSAT applications.

Features
    Ultra Wide Band Power Amplifier
    Compact Size/Self Bias Architecture
    11.0 dB Small Signal Gain
    +24.0 dBm P1dB Compression Point
    +36.0 dBm Third Order Intercept
    100% Visual Inspection to MIL-STD-883 Method 2010