Features
■ Excellent thermal stability
■ Common source configuration
■ POUT = 60 W with 14.3 dB gain @ 945 MHz /
28 V
■ ST advanced PowerSO-10 RF-STAP-package

Description
The STAP57060 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
MOSFET. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 28 V in common source mode at frequencies of
up to 1 GHz. STAP57060 boasts the excellent
gain, linearity and reliability of ST’s latest LDMOS
technology mounted in STAP1 plastic RF power
package.
STAP package has been specially optmized for
RF needs and offers excellent performances and
ease of assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note
AN1294)