Features
 Among the lowest RDS(on) on the market
 Excellent FoM (figure of merit)
 Low Crss/Ciss ratio for EMI immunity
 High avalanche ruggedness

Applications
 Switching applications

Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.