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DF2B20M4SL 데이터시트 (PDF) - Toshiba Semiconductor

DF2B20M4SL Datasheet PDF - Toshiba Semiconductor
부품명 DF2B20M4SL
다운로드  DF2B20M4SL 다운로드
파일 크기   403.06 Kbytes
페이지   8 Pages
제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
상세설명 ESD Protection Diodes Silicon Epitaxial Planar

DF2B20M4SL Datasheet (PDF)

Go To PDF Page 다운로드 데이터시트
DF2B20M4SL Datasheet PDF - Toshiba Semiconductor

부품명 DF2B20M4SL
다운로드  DF2B20M4SL Click to download

파일 크기   403.06 Kbytes
페이지   8 Pages
제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
상세설명 ESD Protection Diodes Silicon Epitaxial Planar

DF2B20M4SL 데이터시트 (HTML) - Toshiba Semiconductor


DF2B20M4SL 제품 세부 정보

General
The DF2B20M4SL is a bidirectional TVS diode with high VRWM(18.5V) designed to protect high speed line or differential signal line
from the damage caused by ESD and other transients voltage. This TVS diode can protect the latter part well by the low dynamic
resistance, improve the system reliability level by the high VESD performance. It is optimum for antennal application such as NFC
for the low capacitance performance. And the small package size (0.62 mm × 0.32 mm) is ideal for high-density mounting.

Applications
Mobile Equipment
 Smartphones
 Tablets
 Notebook PCs
Desktop PCs

Features
(1) Suitable for high working voltage line. (VRWM ≤ 18.5 V)
(2) Protects devices with its high ESD performance.
(VESD = ±15 kV (Contact / Air) @IEC61000-4-2)
(3) Low dynamic resistance protects semiconductor devices from static electricity and noise.
(RDYN = 0.2 Ω (typ.))
(4) Snapback characteristics realizing low clamping voltage protects semiconductor devices.
(VC = 26 V@IPP = 0.5 A (typ.))
(5) Compact package is suitable for use in high density board layouts such as in mobile devices.
(0.62 mm × 0.32 mm size (Toshiba package name: SL2))




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