GENERAL DESCRIPTION
The HSD4M64B4W is a 4M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of four CMOS 1M x 16 bit x 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The HSD4M64B4W is a SO-DIMM(Small Outline Dual in line Memory Module) and is intended for mounting into 144-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications All module components may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.

FEATURES
• Part Identification
    HSD4M64B4W-10 : 100MHz (CL=2)
    HSD4M64B4W-10L : 100MHz (CL=3)
    HSD4M64B4W-12 : 125MHz (CL=3)
    HSD4M64B4W-13 : 133MHz (CL=3)
• Burst mode operation
• Auto & self refresh capability (4096 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ±0.3V power supply
• MRS cycle with address key programs
    - Latency (Access from column address)
    - Burst length (1, 2, 4, 8 & Full page)
    - Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• The used device is 1M x 16bit x 4Banks SDRAM