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SCTH60N120G2-7AG 데이터시트 (PDF) - STMicroelectronics
SCTH60N120G2-7AG Datasheet PDF - STMicroelectronics
부품명 SCTH60N120G2-7AG
다운로드  SCTH60N120G2-7AG 다운로드
파일 크기   356.41 Kbytes
페이지   14 Pages
제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
상세설명 Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 55 A in an H²PAK-7 package

SCTH60N120G2-7AG Datasheet (PDF)

Go To PDF Page 다운로드 데이터시트
SCTH60N120G2-7AG Datasheet PDF - STMicroelectronics

부품명 SCTH60N120G2-7AG
다운로드  SCTH60N120G2-7AG Click to download

파일 크기   356.41 Kbytes
페이지   14 Pages
제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
상세설명 Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 55 A in an H²PAK-7 package

SCTH60N120G2-7AG 데이터시트 (HTML) - STMicroelectronics


SCTH60N120G2-7AG 제품 세부 정보

Features
• AEC-Q101 qualified
• Very fast and robust intrinsic body diode
• Extremely low gate charge and input capacitance
• Source sensing pin for increased efficiency
Applications
• Main inverter (electric traction)
• DC/DC converter for EV/HEV
• On board charger (OBC)
Description
This silicon carbide Power MOSFET device has been developed using ST’s
advanced and innovative 2nd generation SiC MOSFET technology. The device
features remarkably low on-resistance per unit area and very good switching
performance. The variation of switching loss is almost independent of junction
temperature.




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STMicroelectronics 에 대하여

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*이 정보는 일반적인 정보 제공의 목적으로만 제공되며 위 정보로 인해 발생하는 손실이나 손해에 대해 책임을 지지 않습니다.




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