DESCRIPTION
The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband
microwave communication systems. It is capable of delivering 0.5 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band amplifiers etc. The NE960R500 is available in chip form. The NE960R500 has a via hole source grounding and PHS (Plated Heat Sink) for superior RF performance. The NE960R575 is available in a hermetically sealed ceramic package. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES
• High Output Power : Po (1 dB) = +27.5 dBm TYP.
• High Linear Gain : 9.0 dB TYP.
• High Power Added Efficiency : 30 % TYP. @VDS = 9 V, IDset = 180 mA, f = 14.5 GHz