Description
The NCE30H11K uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications. General Features
● VDS =30V,ID =110A
RDS(ON) <3.0mΩ @ VGS=10V (Typ:2.6mΩ)
RDS(ON) <4.8mΩ @ VGS=4.5V (Typ:4.0mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply