Description
Wolfspeed’s CG2H80030D is a gallium nitride (GaN) High
Electron Mobility Transistor (HEMT). GaN has superior
properties compared to silicon or gallium arsenide,
including higher breakdown voltage, higher saturated
electron drift velocity, and higher thermal conductivity. GaN
HEMTs offer greater power density and wider bandwidths
compared to Si and GaAs transistors.
Applications
• 2-Way Private Radio
• Broadband Amplifiers
• Cellular infrastructure
• Test Instrumentation
• Class A, AB, Linear amplifiers suitable for OFDM,
W-CDMA, EDGE, CDMA waveforms
Features
• 17 dB Typical Small Signal Gain at 4 GHz
• 12 dB Typical Small Signal Gain at 8 GHz
• 30 W Typical PSAT
• 28 V Operation
• High Breakdown Voltage
• High Temperature Operation
• Up to 8 GHz Operation
• High Efficiency