Description
Wolfspeed’s CMPA0060002F1 is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN
has superior properties compared to silicon or gallium arsenide, including
higher breakdown voltage, higher saturated electron drift velocity and higher
thermal conductivity. GaN HEMTs also offer greater power density and wider
bandwidths compared to Si and GaAs transistors. This MMIC employs a
distributed (traveling-wave) amplifier design approach, enabling extremely
wide bandwidths to be achieved in a small footprint screw-down package
featuring a copper-tungsten heat sink.
Features
• 18 dB Small Signal Gain
• 4.8 W Typical PSAT
• Operation up to 28 V
• High Breakdown Voltage
• High Temperature Operation
• 0.5” x 0.5” Total Product Size
Applications
• Ultra Broadband Amplifiers
• Fiber Drivers
• Test Instrumentation
• EMC Amplifier Drivers