Description
The GTVA262701FA is a 270-watt GaN on SiC high electron mobility
transistor (HEMT) for use in multi-standard cellular power amplifier
applications. It features input matching, high efficiency, and a
thermally-enhanced surface-mount package with earless flange.
Features
• GaN on SiC HEMT technology
• Input matched
• Typical pulsed CW performance: 10 µs pulse
width, 10% duty cycle, 2690 MHz, 48 V
- Output power at P3dB = 270 W
- Efficiency = 66%
- Gain = 18.1 dB
• Human Body Model Class 1B (per ANSI/ESDA/
JEDEC JS-001)
• Capable of handling 10:1 VSWR @48 V, 60 W
(WCDMA) output power
• Pb-free and RoHS compliant