PTRA087008NB-V1-R2 데이터시트(PDF) - WOLFSPEED, INC.

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PTRA087008NB-V1-R2 데이터시트 (PDF) - WOLFSPEED, INC.

PTRA087008NB-V1-R2 Datasheet PDF - WOLFSPEED, INC.


부품명	PTRA087008NB-V1-R2

다운로드	PTRA087008NB-V1-R2 다운로드

파일 크기	731.2 Kbytes

페이지	11 Pages

제조업체	WOLFSPEED [WOLFSPEED, INC.]

홈페이지	https://www.wolfspeed.com/

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상세설명	Thermally-Enhanced High Power RF LDMOS FET 650 W, 48 V, 755 – 805 MHz

PTRA087008NB-V1-R2 Datasheet (PDF)

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PTRA087008NB-V1-R2 Datasheet PDF - WOLFSPEED, INC.


부품명	PTRA087008NB-V1-R2

다운로드	PTRA087008NB-V1-R2 Click to download

파일 크기	731.2 Kbytes

페이지	11 Pages

제조업체	WOLFSPEED [WOLFSPEED, INC.]

홈페이지	https://www.wolfspeed.com/

Logo

상세설명	Thermally-Enhanced High Power RF LDMOS FET 650 W, 48 V, 755 – 805 MHz

PTRA087008NB-V1-R2 데이터시트 (HTML) - WOLFSPEED, INC.

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PTRA087008NB-V1-R2 제품 세부 정보

Description
The PTRA087008NB is a 650-watt LDMOS FET. It is designed for use in multistandard cellular power amplifier applications from 755 MHz to 805 MHz.
Manufactured with Wolfspeed’s advanced LDMOS process, this device provides
excellent thermal performance and superior reliability
Features
• Broadband internal input and output matching
• Asymmetric design
- Main: P1dB = 245 W Typ
- Peak: P1dB = 380 W Typ
• Typical pulsed CW performance, 805 MHz, 48 V,
Doherty configuration
- Output power at P3dB = 650 W
- Efficiency = 52%
- Gain = 19.5 dB
• Capable of handling 10:1 VSWR @48 V, 30 W
(WCDMA) output power
• Human Body Model Class 2 (per ANSI/ESDA/JEDEC
JS-001)
• Integrated ESD protection
• Low thermal resistance
• RoHS-compliant

유사한 부품 번호 - PTRA087008NB-V1-R2

제조업체	부품명	데이터시트	상세설명
Cree, Inc	PTRA087008NB	660Kb / 11P	Thermally-Enhanced High Power RF LDMOS FET 650 W, 48 V, 755 ??805 MHz

유사한 설명 - PTRA087008NB-V1-R2

제조업체	부품명	데이터시트	상세설명
Infineon Technologies A...	PTVA084007NF	491Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 ??805 MHz Rev. 03, 2017-08-30
	PTRA083818NF	481Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 275 W, 48 V, 733 ??805 MHz Rev. 05.1, 2017-03-30
	PTRA093818NF	470Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 415 W, 48 V, 925 ??960 MHz Rev. 05.1, 2017-08-16
Cree, Inc	PTVA082407NF	639Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 746 ??821 MHz
	PTVA084007NF	486Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 ??805 MHz
	PTRA083818NF	606Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 275 W, 48 V, 733 ??805 MHz
	PTRA084808NF	649Kb / 12P	Thermally-Enhanced High Power RF LDMOS FET 550 W, 48 V, 734 ??821 MHz
	PTRA087008NB	660Kb / 11P	Thermally-Enhanced High Power RF LDMOS FET 650 W, 48 V, 755 ??805 MHz
WOLFSPEED, INC.	PTRA083818NF	708Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 275 W, 48 V, 733 – 805 MHz Rev. 06.2, 2022-1-27
WOLFSPEED, INC.	PTVA084007NF	497Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 – 805 MHz Rev. 04.2, 2022-02-13

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