PTRA095908NB-V1-R2 데이터시트(PDF) - WOLFSPEED, INC.

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PTRA095908NB-V1-R2 데이터시트 (PDF) - WOLFSPEED, INC.

PTRA095908NB-V1-R2 Datasheet PDF - WOLFSPEED, INC.


부품명	PTRA095908NB-V1-R2

다운로드	PTRA095908NB-V1-R2 다운로드

파일 크기	739.37 Kbytes

페이지	9 Pages

제조업체	WOLFSPEED [WOLFSPEED, INC.]

홈페이지	https://www.wolfspeed.com/

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상세설명	Thermally-Enhanced High Power RF LDMOS FET 520 W, 48 V, 925 – 960 MHz

PTRA095908NB-V1-R2 Datasheet (PDF)

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PTRA095908NB-V1-R2 Datasheet PDF - WOLFSPEED, INC.


부품명	PTRA095908NB-V1-R2

다운로드	PTRA095908NB-V1-R2 Click to download

파일 크기	739.37 Kbytes

페이지	9 Pages

제조업체	WOLFSPEED [WOLFSPEED, INC.]

홈페이지	https://www.wolfspeed.com/

Logo

상세설명	Thermally-Enhanced High Power RF LDMOS FET 520 W, 48 V, 925 – 960 MHz

PTRA095908NB-V1-R2 데이터시트 (HTML) - WOLFSPEED, INC.

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PTRA095908NB-V1-R2 제품 세부 정보

Description
The PTRA095908NB is a 520-watt (P3dB) LDMOS FET intended for use in
multi-standard cellular power amplifier applications in the 925 to 960 MHz
frequency band. Features include input and output matching, high gain
and thermally-enhanced plastic overmold package with earless flange.
Features
• Broadband internal input and output matching
• Asymmetric Doherty design
- Main: P1dB = 250 W Typ
- Peak: P1dB = 400 W Typ
• Typical pulsed CW performance, 942 MHz, 48 V,
Doherty configuration, 10 µs, 10% duty cycle
- Output power at P1dB = 160 W
- Output power at P3dB = 520 W
- Efficiency = 58% (POUT = 109 W)
- Gain = 19 dB (POUT = 109 W)
• Capable of handling 10:1 VSWR @ 48 V, 109 W (CW)
output power
• Integrated ESD protection
• Human Body Model Class 1C (per ANSI/ESDA/
JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS compliant

유사한 부품 번호 - PTRA095908NB-V1-R2

제조업체	부품명	데이터시트	상세설명
Infineon Technologies A...	PTRA093302FC	175Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 330 W, 50 V, 746 ??768 MHz Rev. 03, 2016-03-16
Cree, Inc	PTRA093302FC	482Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 330 W, 50 V, 746 ??768 MHz
Infineon Technologies A...	PTRA093302FCV1R0	175Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 330 W, 50 V, 746 ??768 MHz Rev. 03, 2016-03-16
	PTRA093302FCV1R0XTMA1	175Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 330 W, 50 V, 746 ??768 MHz Rev. 03, 2016-03-16
	PTRA093302FCV1R2	175Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 330 W, 50 V, 746 ??768 MHz Rev. 03, 2016-03-16

유사한 설명 - PTRA095908NB-V1-R2

제조업체	부품명	데이터시트	상세설명
Infineon Technologies A...	PTRA093818NF	470Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 415 W, 48 V, 925 ??960 MHz Rev. 05.1, 2017-08-16
	PTRA094808NF	463Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 480 W, 48 V, 859 ??960 MHz Rev. 03, 2017-08-21
	PTVA092407NF	434Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 869 ??960 MHz Rev. 02.4, 2017-02-07
Cree, Inc	PTRA097008NB	732Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 630 W, 48 V, 920 ??960 MHz
	PTRA094252FC	497Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 208 W, 48 V, 746 ??960 MHz
	PTFB092707FH	556Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 270 W, 28 V, 925 ??960 MHz
	PTRA093818NF	600Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 415 W, 48 V, 925 ??960 MHz
	PTVA092407NF	595Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 869 ??960 MHz
WOLFSPEED, INC.	PTRA093818NF	685Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 415 W, 48 V, 925 – 960 MHz Rev. 06.2, 2022-01-04
WOLFSPEED, INC.	PTRA097008NB	556Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 630 W, 48 V, 920 – 960 MHz Rev. 04, 2023-06-22

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