Features
• 650 V enhancement mode power transistor
• Bottom-side cooled configuration
• RDS(on) = 25 mΩ
• IDS(max) = 60 A
• Ultra-low FOM die
• Low inductance GaNPX® package
• Simple drive requirements (0 V to 6 V)
• Transient tolerant gate drive (-20 V / +10 V)
• Very high switching frequency (> 10 MHz)
• Fast and controllable fall and rise times
• Reverse current capability
• Zero reverse recovery loss
• Small 11 x 9 mm2 PCB footprint
• Source Sense (SS) pins for optimized gate drive
• Dual Gate Pins for optimal paralleling
• RoHS 3 (6 + 4) compliant

Applications
• AC-DC Converters
• DC-DC Converters
• Bridgeless Totem Pole PFC
• Inverters
• Energy Storage Systems
• On Board Battery Chargers
• Uninterruptable Power Supplies
• Solar Energy
• Industrial Motor Drives
• Laser Drivers
• Traction Drive
• Wireless Power Transfer

Description
The GS66516B is an enhancement mode GaN on silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS66516B is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.