General Description
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process. Advancements in both silicon and
DUAL COOL package technologies have been combined to offer
the lowest rDS(on) while maintaining excellent switching performance
by extremely low Junction−to−Ambient thermal resistance.

Features
• Max rDS(on) = 1.1 m at VGS = 10 V, ID = 43 A
• Max rDS(on) = 1.3 m at VGS = 8 V, ID = 37 A
• Advanced Package and Silicon Combination for Low rDS(on)
and High Efficiency
• Next Generation Enhanced Body Diode Technology,
Engineered for Soft Recovery
• Low Profile 8x8 mm MLP Package
• MSL1 Robust Package Design
• 100% UIL Tested
• This Device is Pb−Free, Halide Free and RoHS Compliant

Applications
• OringFET / Load Switching
• Synchronous Rectification
• DC−DC Conversion