1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
 Very fast switching
 Trench MOSFET technology
 ESD protection up to 2 kV
 Logic-level compatible
 Ultra thin package profile with 0.37
mm height
1.3 Applications
 Relay driver
 High-speed line driver
 Low-side loadswitch
 Switching circuits