1.1 General description
Dual standard level N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Suitable for high frequency
applications due to fast switching
characteristics
Suitable for use in compact designs
due to low profile
1.3 Applications
DC-to-DC converters
Motor and relay drivers