1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
• Trench MOSFET technology
• Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
• Exposed drain pad for excellent thermal conduction
• ElectroStatic Discharge (ESD) protection 1 kV
• Very low Drain-Source on-state resistance RDSon = 34 mΩ
• Very low threshold voltage of 0.65 V for portable applications
3. Applications
• Low-side load switch and charging switch for portable devices
• Power management in battery-driven portables
• LED driver
• DC-to-DC converters