FEATURES
• Low-voltage operation: VDD = 1.8 to 5.5 V
• Internal memory
Program memory (ROM):
2048 × 8 bits (μPD754302, 754302(A))
4096 × 8 bits (μPD754304, 754304(A))
Data memory (RAM): 256 × 4 bits
• Variable instruction execution time effective for highspeed
operation and power saving
0.95, 1.91, 3.81, or 15.3 μs (at 4.19 MHz)
0.67, 1.33, 2.67, or 10.7 μs (at 6.0 MHz)
• Internal serial interface (1 channel)
• Powerful timer function (3 channels)
• Inherits instruction set of existing 75X Series for easy
replacement