The HGTG12N60C3D is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a MOSFET
and the low on−state conduction loss of a bipolar transistor. The much
lower on−state voltage drop varies only moderately between 25°C and
150°C. The IGBT used is the development type TA49123. The diode
used in anti parallel with the IGBT is the development type TA49061.
This IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses are
essential
Formerly Developmental Type TA49117.

Features
• 24 A, 600 V at TC = 25°C
• Typical Fall Time 210 ns at TJ = 150°C
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti−Parallel Diode
• This is a Pb−Free Device