Description
The CNY17XM, CNY17FXM, and MOC8106M devices consist of
a gallium arsenide infrared emitting diode coupled with an NPN
phototransistor in a dual in−line package.

Features
 High BVCEO: 70 V Minimum
(CNY17XM, CNY17FXM, MOC8106M)
 Closely Matched Current Transfer Ratio (CTR) Minimizes
Unit−to−Unit Variation
 Current Transfer Ratio In Select Groups
 Very Low Coupled Capacitance Along With
No Chip−to−Pin 6 Base Connection for Minimum Noise
Susceptibility (CNY17FXM, MOC8106M)
 Safety and Regulatory Approvals:
 UL1577, 4,170 VACRMS for 1 Minute
 DIN−EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage

Applications
 Power Supply Regulators
 Digital Logic Inputs
 Microprocessor Inputs
 Appliance Sensor Systems
 Industrial Controls