General Description
These N-channel enhancement mode power mosfets used
advanced trench technology design, provided excellent Rdson
and low gate charge. Which accords with the RoHS standard.

Features
VDS = 30V,ID =90A
RDS(ON),3.9 mΩ(Typ) @ VGS =10V
RDS(ON), 6.5mΩ(Typ) @ VGS =4.5V
Low on resistance
Low gate charge
Fast switching
Low reverse transfer capacitances

Application
DC-DC converters
Synchronous Rectifier