Features
• 7-channel Darlington Array
• 500-mA Rated Drain Current (Per Channel)
• Very Low Output Leakage < 10 nA Per Channel
• Power Efficient with Low RDS-on
• Extended Temperature Range: TA = –40°C to 125°C
• High-Voltage Outputs: 40 V
• Compatible with 1.8-V to 5.0-V Logic Interface
• Integrated Free-wheeling Diodes for Inductive Load
• Improved Noise-immunity with integrated RC filter
• Enhanced ESD Protection Exceeds JESD 22 – 2.5-kV
HBM, 1.5-kV CDM
• Available in SOP16 and TSSOP16 Packages

Applications
• Inductive Loads
– Relays
– Unipolar Stepper & Brushed DC Motors
– Solenoids & Valves
• LED Indicators
• Logic Level Shifting
• Gate & IGBT Drive

Description
The TPM2003 is a high-voltage, high-current NMOS
transistor array. This device consists of seven channels of
low-side NMOS transistors with high-voltage outputs and
free-wheeling diodes for inductive loads.
The maximum drain-current rating of a single NMOS
channel is 500 mA. The device supports a wide I/O voltage
range from 1.8 V to 30 V. The transistors can drive
in parallel for higher current capability. Enhanced ESD
performance enhances system-level reliability.
The TPM2003 can replace traditional Bipolar Darlington
arrays with better thermal efficiency and reliability.