General Description
The NGW40T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring
third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures.
The NGW40T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a shortcircuit withstand time of 5 μs. This hard-switching 650 V, 40 A IGBT is optimized for high-voltage,
high-frequency industrial power inverter applications and servo motor drive applications

Features and benefits
• Collector current (IC) rated at 40 A
• Low conduction and switching losses
• Stable and tight parameters for easy parallel operation
• Maximum junction temperature of 175 °C
• Fully rated as a soft fast reverse recovery diode
• 5 μs short circuit withstand time
• RoHS compliant, lead-free plating

Applications
• Motor drives for industrail and consumer appliances
• Serve motors operating between 5-20 kW (up to 20 kHz) for robotics, elevators, operating
grippers, in-line manufactuing, etc.
• Power inverters
• Uninterruptible Power Supply (UPS) inverter
• Photovoltaic (PV) strings
• EV charging
• Induction heating
• Welding