ADM35P06E 데이터시트(PDF) - Advanced (Shenzhen) Electronics Co.,Ltd

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ADM35P06E 데이터시트 (PDF) - Advanced (Shenzhen) Electronics Co.,Ltd

ADM35P06E Datasheet PDF - Advanced (Shenzhen) Electronics Co.,Ltd


부품명	ADM35P06E

다운로드	ADM35P06E 다운로드

파일 크기	520.61 Kbytes

페이지	5 Pages

제조업체	ADV [Advanced (Shenzhen) Electronics Co.,Ltd]

홈페이지	http://www.advsemi.com/en/

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상세설명	P-Channel Logic Level Enhancement Mode Field Effect Transistor

ADM35P06E Datasheet (PDF)

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다운로드 데이터시트

ADM35P06E Datasheet PDF - Advanced (Shenzhen) Electronics Co.,Ltd


부품명	ADM35P06E

다운로드	ADM35P06E Click to download

파일 크기	520.61 Kbytes

페이지	5 Pages

제조업체	ADV [Advanced (Shenzhen) Electronics Co.,Ltd]

홈페이지	http://www.advsemi.com/en/

Logo

상세설명	P-Channel Logic Level Enhancement Mode Field Effect Transistor

ADM35P06E 데이터시트 (HTML) - Advanced (Shenzhen) Electronics Co.,Ltd

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ADM35P06E Datasheet HTML 5Page - Advanced (Shenzhen) Electronics Co.,Ltd

ADM35P06E 제품 세부 정보

Features:
● Low Gate Charge for Fast Switching Application
● Fast Switching
● Improved dv/dt Capability
● Green Device Available

Description:
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. design to provide excellent RDS(ON) with low gate charge.provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency fast switching applications.

유사한 부품 번호 - ADM35P06E

제조업체	부품명	데이터시트	상세설명
Advanced (Shenzhen) Ele...	ADM35P03Z	405Kb / 4P	P-Channel Logic Level Enhancement Mode Field Effect Transistor Feb,2018 -Rev.1.02

유사한 설명 - ADM35P06E

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