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STBV10350BY4 데이터시트 (PDF) - Innogration Technologies, Inc.
STBV10350BY4 Datasheet PDF - Innogration Technologies, Inc.
부품명 STBV10350BY4
다운로드  STBV10350BY4 다운로드
파일 크기   1604.83 Kbytes
페이지   6 Pages
제조업체  INNOGRATION [Innogration Technologies, Inc.]
홈페이지  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
상세설명 Gallium Nitride 50V, 350W,0.6-1GHz RF Power Transistor

STBV10350BY4 Datasheet (PDF)

Go To PDF Page 다운로드 데이터시트
STBV10350BY4 Datasheet PDF - Innogration Technologies, Inc.

부품명 STBV10350BY4
다운로드  STBV10350BY4 Click to download

파일 크기   1604.83 Kbytes
페이지   6 Pages
제조업체  INNOGRATION [Innogration Technologies, Inc.]
홈페이지  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
상세설명 Gallium Nitride 50V, 350W,0.6-1GHz RF Power Transistor

STBV10350BY4 데이터시트 (HTML) - Innogration Technologies, Inc.


STBV10350BY4 제품 세부 정보

Description
The STBV10350BY4 is a 350watt Doherty pair capable, GaN HEMT, ideal for for 4G/5G cellular
applications from 0.6 to 1GHz..
It can be configured as asymmetrical Doherty delivering 45-55W average power, according to normal
8-9dB back off.
There is no guarantee of performance when this part is used outside of stated frequencies.

Applications
 Asymmetrical Doherty amplifier within 0.6-1GHz
 UHF TV
 P band power amplifier




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