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STBV35150C6 데이터시트 (PDF) - Innogration Technologies, Inc.

STBV35150C6 Datasheet PDF - Innogration Technologies, Inc.
부품명 STBV35150C6
다운로드  STBV35150C6 다운로드
파일 크기   1497.83 Kbytes
페이지   9 Pages
제조업체  INNOGRATION [Innogration Technologies, Inc.]
홈페이지  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
상세설명 Gallium Nitride 50V, 150W, 0.1-3.5GHz RF Power Transistor

STBV35150C6 Datasheet (PDF)

Go To PDF Page 다운로드 데이터시트
STBV35150C6 Datasheet PDF - Innogration Technologies, Inc.

부품명 STBV35150C6
다운로드  STBV35150C6 Click to download

파일 크기   1497.83 Kbytes
페이지   9 Pages
제조업체  INNOGRATION [Innogration Technologies, Inc.]
홈페이지  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
상세설명 Gallium Nitride 50V, 150W, 0.1-3.5GHz RF Power Transistor

STBV35150C6 데이터시트 (HTML) - Innogration Technologies, Inc.


STBV35150C6 제품 세부 정보

Description
The STBV35150C6 is a 150watt, GaN HEMT, ideal for general applications from 0.1 to 3.5GHz.
It features high gain, wide band and low cost, in 10*6mm plastic open cavity package, enabling
surface mounted on PCB through grounding vias or soldered on heatsink directly.
It is a highly cost effective option for pulsed power amplifier within L/S band.
There is no guarantee of performance when this part is used outside of stated frequencies.

Applications
 5G, 4G wireless infrastructure
 Wideband or narrowband power amplifier
 S band pulsed power amplifier
 L band pulsed power amplifier




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