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STBV38130E2 데이터시트 (PDF) - Innogration Technologies, Inc.

STBV38130E2 Datasheet PDF - Innogration Technologies, Inc.
부품명 STBV38130E2
다운로드  STBV38130E2 다운로드
파일 크기   1053.8 Kbytes
페이지   5 Pages
제조업체  INNOGRATION [Innogration Technologies, Inc.]
홈페이지  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
상세설명 Gallium Nitride 50V, 130W, 0.1-3.8GHz RF Power Transistor

STBV38130E2 Datasheet (PDF)

Go To PDF Page 다운로드 데이터시트
STBV38130E2 Datasheet PDF - Innogration Technologies, Inc.

부품명 STBV38130E2
다운로드  STBV38130E2 Click to download

파일 크기   1053.8 Kbytes
페이지   5 Pages
제조업체  INNOGRATION [Innogration Technologies, Inc.]
홈페이지  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
상세설명 Gallium Nitride 50V, 130W, 0.1-3.8GHz RF Power Transistor

STBV38130E2 데이터시트 (HTML) - Innogration Technologies, Inc.


STBV38130E2 제품 세부 정보

Description
The STBV38130E2 is a 130watt, GaN HEMT, ideal for general applications from 0.1 to 3.8GHz.
It can support CW, pulse or any modulated signal.
It features high gain, wide band and low cost, in 6.5*6.5mm ceramic package with copper flange.
Its gullwing leads enable surface mounted on PCB through grounding vias or soldered on heatsink
There is no guarantee of performance when this part is used outside of stated frequencies.

Applications
 5G, 4G wireless infrastructure
 S band power amplifier
 Test instruments
 Jammer




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