General Description
DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss They are designed for the applications such as general inverters and UPS.

Features
 Low V CE(sat) Fast IGBT technology
 Low switching loss
 Maximum junction temperature 175 o C
 V CE(sat) with positive temperature coefficient
 Fast & soft reverse recovery anti parallel FWD
 Lead free package

Typical Applications
 Inverter for motor drive
 AC and DC servo drive amplifier
 Uninterruptible power supply