FEATURES
● 650 V enhancement mode power transistor
● 850 V transient drain-to-source voltage
● Bottom-cooled 8x8 mm PDFN package
● RDS(on)(Typ) = 150 mΩ
● DS(max) = 11 A / IDS(Max pulse) = 19A
● Ultra-low FOM
● Simple gate drive requirements (0 V to 6 V)
● Transient tolerant gate drive (-20 V / +10 V)
● High switching frequency (> 1 MHz)
● Fast and controllable fall and rise times
● Reverse conduction capability
● Zero reverse recovery loss
● Source Sense (SS) pin for optimized gate drive
● ROHS Compliant
● Halogen-free
APPLICATIONS
● Power Adapters
● LED Lighting Drivers
● Fast Battery Charging
● Power Factor Correction
● Appliance Motor Drives
● Wireless Power Transfer
● Industrial Power Supplies