GENERAL DESCRIPTION
The ME7804AS is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored
to minimize on-state resistance. These devices are particularly
suited for low voltage application such as cellular phone and
notebook computer power management and other battery
powered circuits where high-side switching , and low in-line power
loss are needed in a very small outline surface mount package.

FEATURES
● RDS(ON) ≦18 mΩ@VGS=10V
● RDS(ON) ≦30 mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability

APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load SwitchC
● LCD Display inverter