| 제조업체 | 부품명 | 데이터시트 | 상세설명 |
 Renesas Technology Corp |
HSC285
|
46Kb / 5P |
SILICON SCHOTTKY BARRIER DIODE FOR HIGH FREQUENCY DETECTION
|
 Toshiba Semiconductor |
JDH3D01S
|
168Kb / 4P |
Diode Silicon Epitaxial Schottky Barrier Type For wave detection
|
|
DSF05S30CTB
|
178Kb / 3P |
Diode Silicon Epitaxial Schottky Barrier Type
|
|
DSF05S30U
|
183Kb / 3P |
Diode Silicon Epitaxial Schottky Barrier Type
|
|
DSF07S30U
|
186Kb / 3P |
Diode Silicon Epitaxial Schottky Barrier Type
|
|
DSR05S30CTB
|
179Kb / 3P |
Diode Silicon Epitaxial Schottky Barrier Type
|
|
DSR05S30U
|
184Kb / 3P |
Diode Silicon Epitaxial Schottky Barrier Type
|
|
DSR07S30U
|
188Kb / 3P |
Diode Silicon Epitaxial Schottky Barrier Type
|
 KEC(Korea Electronics) |
KDR322
|
351Kb / 2P |
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE
|
 Toshiba Semiconductor |
JDH2S01T
|
70Kb / 2P |
Diode Silicon Epitaxial Schottky Barrier Type
|